SEGR and PIGS Failure Analysis of SiC Mosfet

F. Pintacuda, S. Massett, E. Vitanza, M. Muschitiello, V. Cantarella
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Abstract

This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.
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SiC Mosfet的SEGR和pig失效分析
本文报道了SiC Mosfet在经过SEE试验后的SEGR和pig失效分析结果。分析发现在SEGR失效点的SiC结处存在一个热点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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