K. Takahashi, H. Fujita, H. Toshiyoshi, K. Suzuki, H. Funaki, K. Itaya
{"title":"Tunable light grating integrated with high-voltage driver IC for image projection display","authors":"K. Takahashi, H. Fujita, H. Toshiyoshi, K. Suzuki, H. Funaki, K. Itaya","doi":"10.1109/MEMSYS.2007.4433037","DOIUrl":null,"url":null,"abstract":"This paper presents a monolithic integration technique of MEMS grating light valves with high-voltage (40 V) driver circuits that target for image projection display devices. Driver circuits were prepared on an 8-mum-thick SOI (Silicon-on- Insulator) wafer by the DMO S (Double-diffused Metal Oxide Semiconductor) processes, after which the MEMS grating were integrated in the identical SOI layer by post-processing using the DRIE (Deep Reactive Ion Etching). In our work, optical light angle is modulated by changing the period of the MEMS grating pixel by means of electrostatic actuation. Optical diffraction angles of 6.6deg (OFF-state) and 3.3 deg (ON-State) were obtained with drive voltage of 0 V and 40 V, respectively.","PeriodicalId":6388,"journal":{"name":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"26 1","pages":"147-150"},"PeriodicalIF":0.0000,"publicationDate":"2007-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2007.4433037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This paper presents a monolithic integration technique of MEMS grating light valves with high-voltage (40 V) driver circuits that target for image projection display devices. Driver circuits were prepared on an 8-mum-thick SOI (Silicon-on- Insulator) wafer by the DMO S (Double-diffused Metal Oxide Semiconductor) processes, after which the MEMS grating were integrated in the identical SOI layer by post-processing using the DRIE (Deep Reactive Ion Etching). In our work, optical light angle is modulated by changing the period of the MEMS grating pixel by means of electrostatic actuation. Optical diffraction angles of 6.6deg (OFF-state) and 3.3 deg (ON-State) were obtained with drive voltage of 0 V and 40 V, respectively.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
