Overlay error statistics for multiple-exposure patterning

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-04-04 DOI:10.1117/1.JMM.18.2.021202
Allen H. Gabor, N. Felix
{"title":"Overlay error statistics for multiple-exposure patterning","authors":"Allen H. Gabor, N. Felix","doi":"10.1117/1.JMM.18.2.021202","DOIUrl":null,"url":null,"abstract":"Abstract. Background: The mathematical equations that explain overlay error of multiple-exposure patterning schemes have not been fully described in the literature and some commonly accepted methods lead to inaccurate estimated and/or measured overlay error. Aims: Develop the proper mathematical framework, using a first principles statistical approach, so that engineers using multiple-exposure patterning can determine the overlay impact and overlay controls needed. Alert patterning community that grouped overlay metrology of multiple-exposures undermeasures the true overlay error. Approach: Use image placement error and population-based statistics to enable a mathematical framework to be established that predicts the actual overlay error for an overlaying pattern that minimizes overlay error back to a pattern that is patterned with multiple-exposure patterning. Results: The overlay error between two patterns is usually less than the root sum square of the two overlay error values of the patterns individually measured to a common prior pattern. Overlay error for a pattern minimizing back to multiple-prior patterns increases quickly as systematic overlay error between the prior patterns increases. Conclusions: Controlling systematic overlay error between patterns of a multipatterned layer is important for subsequent patterns that need to minimize overlay error back to the composite multipatterned layer. The ratio between the overlay error determined with metrology and true overlay can be calculated.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"39 1","pages":"021202 - 021202"},"PeriodicalIF":1.5000,"publicationDate":"2019-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.18.2.021202","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 2

Abstract

Abstract. Background: The mathematical equations that explain overlay error of multiple-exposure patterning schemes have not been fully described in the literature and some commonly accepted methods lead to inaccurate estimated and/or measured overlay error. Aims: Develop the proper mathematical framework, using a first principles statistical approach, so that engineers using multiple-exposure patterning can determine the overlay impact and overlay controls needed. Alert patterning community that grouped overlay metrology of multiple-exposures undermeasures the true overlay error. Approach: Use image placement error and population-based statistics to enable a mathematical framework to be established that predicts the actual overlay error for an overlaying pattern that minimizes overlay error back to a pattern that is patterned with multiple-exposure patterning. Results: The overlay error between two patterns is usually less than the root sum square of the two overlay error values of the patterns individually measured to a common prior pattern. Overlay error for a pattern minimizing back to multiple-prior patterns increases quickly as systematic overlay error between the prior patterns increases. Conclusions: Controlling systematic overlay error between patterns of a multipatterned layer is important for subsequent patterns that need to minimize overlay error back to the composite multipatterned layer. The ratio between the overlay error determined with metrology and true overlay can be calculated.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
多重曝光模式的叠加误差统计
摘要背景:解释多重曝光模式叠加误差的数学方程尚未在文献中得到充分描述,一些普遍接受的方法导致不准确的估计和/或测量叠加误差。目的:利用第一原理统计方法开发适当的数学框架,以便工程师使用多重曝光模式可以确定所需的覆盖影响和覆盖控制。警报模式社区,分组叠加计量的多重曝光低估了真正的叠加误差。方法:使用图像放置误差和基于人口的统计来建立一个数学框架,该框架可以预测叠加模式的实际叠加误差,从而最大限度地减少叠加误差,使其回归到使用多次曝光模式的模式。结果:两种模式之间的叠加误差通常小于单独测量到的两种模式的叠加误差值的平方根。当先验模式之间的系统叠加误差增加时,最小化回归到多先验模式的叠加误差也会迅速增加。结论:控制多图纹层中图案之间的系统叠加误差对于后续图案需要将叠加误差最小化以返回复合多图纹层具有重要意义。可以计算出测量得到的叠加误差与真实叠加的比值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
期刊最新文献
Rayleigh or Abbe? Origin and naming of the resolution formula of microlithography JM3 is Gone, Long Live JM3! Direct comparison of line edge roughness measurements by SEM and a metrological tilting-atomic force microscopy for reference metrology Resolution enhancement with source-wavelength optimization according to illumination angle in optical lithography Particle and pattern discriminant freeze-cleaning method
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1