Resolution enhancement with source-wavelength optimization according to illumination angle in optical lithography

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2020-10-01 DOI:10.1117/1.JMM.19.4.043201
Manabu Hakko, Kanji Suzuki
{"title":"Resolution enhancement with source-wavelength optimization according to illumination angle in optical lithography","authors":"Manabu Hakko, Kanji Suzuki","doi":"10.1117/1.JMM.19.4.043201","DOIUrl":null,"url":null,"abstract":"Abstract. Background: To increase the resolution and depth of focus (DOF) of flat panel display (FPD) exposure systems, off-axis illumination (OAI) conditions are used extensively. OAI using narrowband wavelength illumination has been studied sufficiently. In contrast, new techniques that consider broadband wavelength illumination are needed because the effects of OAI differ between broadband and narrowband illumination. Aim: This paper presents a divided spectrum illumination (DSI), a new design concept that achieves both high resolution and a large DOF. Approach: The source wavelength is optimized according to the illumination angle. Results: Experimental imaging results for line and space patterns with a line width of 1.0 and a pitch of 2.0  μm demonstrate that the DSI design provides improved resolution. Exposure results also indicate that resist profiles using DSI are sufficiently sharp to retain pattern fidelity at the top of the resist. The DOF with DSI is also improved by 21% compared to that obtained with traditional OAI. Conclusions: DSI achieves both high resolution and a large DOF while maintaining high productivity.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.19.4.043201","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 4

Abstract

Abstract. Background: To increase the resolution and depth of focus (DOF) of flat panel display (FPD) exposure systems, off-axis illumination (OAI) conditions are used extensively. OAI using narrowband wavelength illumination has been studied sufficiently. In contrast, new techniques that consider broadband wavelength illumination are needed because the effects of OAI differ between broadband and narrowband illumination. Aim: This paper presents a divided spectrum illumination (DSI), a new design concept that achieves both high resolution and a large DOF. Approach: The source wavelength is optimized according to the illumination angle. Results: Experimental imaging results for line and space patterns with a line width of 1.0 and a pitch of 2.0  μm demonstrate that the DSI design provides improved resolution. Exposure results also indicate that resist profiles using DSI are sufficiently sharp to retain pattern fidelity at the top of the resist. The DOF with DSI is also improved by 21% compared to that obtained with traditional OAI. Conclusions: DSI achieves both high resolution and a large DOF while maintaining high productivity.
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光刻中根据光照角度优化光源波长以提高分辨率
摘要背景:为了提高平板显示器(FPD)曝光系统的分辨率和焦距(DOF),离轴照明(OAI)条件被广泛使用。利用窄带波长照明的OAI已经得到了充分的研究。相比之下,需要考虑宽带波长照明的新技术,因为宽带和窄带照明对OAI的影响是不同的。目的:提出了一种既能实现高分辨率又能实现大景深的分光谱照明(DSI)新设计理念。方法:根据照明角度优化光源波长。结果:对线宽为1.0、间距为2.0 μm的线和空间图形的实验成像结果表明,DSI设计提供了更高的分辨率。曝光结果还表明,使用DSI的抗蚀剂轮廓足够锐利,可以在抗蚀剂顶部保留图案保真度。与传统的OAI相比,DSI的DOF也提高了21%。结论:DSI在保持高生产率的同时,实现了高分辨率和大自由度。
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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