Влияние поля коронного разряда на формирование голографических дифракционных решеток в пленках As-=SUB=-40-=/SUB=-S-=SUB=-60-x-=/SUB=-Se-=SUB=-x-=/SUB=-

А. М. Настас, М. С. Йову, А. М. Присакар, Г.М. Тридух, Владимир Прилепов, Алексей Леонидович Толстик, Игорь Вячеславович Сташкевич
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Abstract

The influence of the corona discharge on the holographic recording and the subsequence chemical etching of the recording holographic gratings in the Cr/As40S60-xSex thin film structures was investigated. It was established that applied of the positive corona discharge leads to the increase of the holographic sensitivity during the recording in the As-S-Se films, as well as to the amplification of the diffraction efficiency of the recording gratings and of the relief-phase diffractive gratings obtaining in the result of the consecutive chemical etching. Among the investigated films of the As40S60-xSex system, the best results on the application of the Argon laser irradiation (=488 nm) was obtaining for the composition As40S39Se21. Applied of the corona discharge bring to the increase of the holographic sensitivity more than up two order, and of the diffraction efficiency about three order in the respect of the of the ordinary recording. Reciprocally was reached a amplification of the diffraction efficiency of the relief diffraction gratings formed in the result of the sequent chemical etching up to 30 %.
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电晕放电场对As- 40-= -40-= -S- x-= -60-x-= =SUB -x-= SUB
研究了电晕放电对Cr/As40S60-xSex薄膜结构中全息记录和随后化学刻蚀记录全息光栅的影响。结果表明,正电晕放电的应用提高了as - s- se薄膜在记录过程中的全息灵敏度,提高了记录光栅的衍射效率和连续化学刻蚀得到的缓相衍射光栅的衍射效率。在所研究的As40S60-xSex体系薄膜中,氩激光照射(最大波长为488 nm)效果最好的是As40S39Se21。电晕放电的应用使全息灵敏度提高了两个以上的数量级,使衍射效率提高了三个数量级。经连续化学刻蚀而形成的浮雕衍射光栅的衍射效率相应地提高了30%。
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