{"title":"Impact of Source-Drain Tunneling on Double-Gate Performance","authors":"A. Spinelli, R. Gusmeroli","doi":"10.1109/ESIME.2006.1643988","DOIUrl":null,"url":null,"abstract":"We investigate the effects of source-drain tunneling on the performance of double-gate MOS devices with a 2D quantum-mechanical model. We show that a clear signature of the source-drain tunneling current is observable in the subthreshold behavior, affecting device performance even at room temperature. Dependences of the tunneling current on the main design variables are then analyzed in detail","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We investigate the effects of source-drain tunneling on the performance of double-gate MOS devices with a 2D quantum-mechanical model. We show that a clear signature of the source-drain tunneling current is observable in the subthreshold behavior, affecting device performance even at room temperature. Dependences of the tunneling current on the main design variables are then analyzed in detail
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