C. P. Seltzer, M. Bagley, G. Sherlock, D. Elton, S. Perrin, D. M. Cooper
{"title":"Properties of facet-coated 1.3 mu m InGaAsP/InP MQW lasers","authors":"C. P. Seltzer, M. Bagley, G. Sherlock, D. Elton, S. Perrin, D. M. Cooper","doi":"10.1109/ICIPRM.1991.147334","DOIUrl":null,"url":null,"abstract":"Multiple quantum well (MQW) external cavity lasers and optical amplifiers operating in the 1.3 mu m optical fiber communications window are described. The device designs and fabrications are discussed. It is demonstrated that MQW devices offer enhanced characteristics when compared with conventional bulk devices. An MQW laser with a single facet coat in an external cavity was measured to have a tuning range of 160 nm from 1.255 mu m to 1.417 mu m. The device had a peak power of over 40 mW at 1.336 mu m, and a side mode suppression ratio of more than 40 dB. An optical amplifier with a length of 500 mu m had a bandwidth of 110 nm, a 18 dB single-pass gain, and saturated output power of 14 dBm (25 mW).<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"18 1","pages":"192-195"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Multiple quantum well (MQW) external cavity lasers and optical amplifiers operating in the 1.3 mu m optical fiber communications window are described. The device designs and fabrications are discussed. It is demonstrated that MQW devices offer enhanced characteristics when compared with conventional bulk devices. An MQW laser with a single facet coat in an external cavity was measured to have a tuning range of 160 nm from 1.255 mu m to 1.417 mu m. The device had a peak power of over 40 mW at 1.336 mu m, and a side mode suppression ratio of more than 40 dB. An optical amplifier with a length of 500 mu m had a bandwidth of 110 nm, a 18 dB single-pass gain, and saturated output power of 14 dBm (25 mW).<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
