{"title":"Implantation damage in InP: thermal stability effects","authors":"A. Goltzené, B. Meyer, C. Schwab","doi":"10.1109/ICIPRM.1991.147462","DOIUrl":null,"url":null,"abstract":"The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"97 24 1","pages":"664-667"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<>
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