L. Sang, Wenting Zhang, Yunlai An, Liang Wang, Yanfang Chen, Jialin Li, Yujie Du, Rui Liu, X. Niu, Xiaolei Yang, Shiyan Li, Gang Chen, Xinling Tang, J. Wu, Fei Yang
{"title":"Development of high-voltage SiC Power Electronic Devices","authors":"L. Sang, Wenting Zhang, Yunlai An, Liang Wang, Yanfang Chen, Jialin Li, Yujie Du, Rui Liu, X. Niu, Xiaolei Yang, Shiyan Li, Gang Chen, Xinling Tang, J. Wu, Fei Yang","doi":"10.1109/SSLChinaIFWS54608.2021.9675164","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) is a widely used wide bandgap semiconductor which has the advantages of high voltage, high current capacity, low loss, fast heat dissipation and so on. In this paper, we review recent progress in the high-voltage SiC power electronic devices, including schottky barrier diode (SBD), PiN diode, junction barrier schottky diode (JBS), metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), and SiC power module. Moreover futher applications and perspectives of high voltage SiC devices is discussed.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"1 1","pages":"17-24"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon carbide (SiC) is a widely used wide bandgap semiconductor which has the advantages of high voltage, high current capacity, low loss, fast heat dissipation and so on. In this paper, we review recent progress in the high-voltage SiC power electronic devices, including schottky barrier diode (SBD), PiN diode, junction barrier schottky diode (JBS), metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), and SiC power module. Moreover futher applications and perspectives of high voltage SiC devices is discussed.
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