Graphene nanomesh contacts and its transport properties

Abstract

This paper present a study that combines the advantages of GNM with the use of few layer graphene (FLG). In particular, by creating the nanomesh structure in the contact area of the FLG, we are able to achieve two previously unrealized feats: 1) We obtain a substantially reduced contact resistance through the contact to multiple graphene layers and 2) we are able to observe on/off current ratios that rival those in SLG FETs. Based on these findings and a detailed study comparing the impact of scattering in GNM FETs and conventional graphene FETs, we are concluding that FLG FETs with GNM contacts are an excellent choice for future generations of graphene based devices.