Embedded Memory Test Strategies and Repair

M. A. Ahmed, D. Rani, S. A. Sattar
{"title":"Embedded Memory Test Strategies and Repair","authors":"M. A. Ahmed, D. Rani, S. A. Sattar","doi":"10.5829/ije.2017.30.06c.03","DOIUrl":null,"url":null,"abstract":"The demand of self- testing proportionally increases with memory size in System on Chip (SoC). SoC \narchitecture normally occupies the majority of its area by memories. Due to increase in density of \nembedded memories, there is a need of self- testing mechanism in SoC design. Therefore, this research \nstudy focuses on this problem and introduces a smooth solution for self- testing. In the proposed \nmemory test algorithm, the self-testing as well as self-repair mechanisms are incorporated. This \nscheme repairs the detected faults and is easily integrated with SoC design. Here, an attempt has been \nmade to implement the memory built- in-self- repair (MBISR) architecture to test and repair the faults \nfrom the embedded memories. It is little, and it supports at-fast test without timing penalty during its \noperation. The proposed method is a better alternative in speed and low area overhead. Thus, it plays a \nsignificant role in yield improvement.","PeriodicalId":14066,"journal":{"name":"International Journal of Engineering - Transactions C: Aspects","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Engineering - Transactions C: Aspects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5829/ije.2017.30.06c.03","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 9

Abstract

The demand of self- testing proportionally increases with memory size in System on Chip (SoC). SoC architecture normally occupies the majority of its area by memories. Due to increase in density of embedded memories, there is a need of self- testing mechanism in SoC design. Therefore, this research study focuses on this problem and introduces a smooth solution for self- testing. In the proposed memory test algorithm, the self-testing as well as self-repair mechanisms are incorporated. This scheme repairs the detected faults and is easily integrated with SoC design. Here, an attempt has been made to implement the memory built- in-self- repair (MBISR) architecture to test and repair the faults from the embedded memories. It is little, and it supports at-fast test without timing penalty during its operation. The proposed method is a better alternative in speed and low area overhead. Thus, it plays a significant role in yield improvement.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
嵌入式内存测试策略与修复
在片上系统(SoC)中,自测试的需求随着存储器的大小成比例地增加。SoC架构通常由存储器占据其大部分区域。由于嵌入式存储器密度的增加,在SoC设计中需要自测试机制。因此,本文针对这一问题进行了研究,并引入了一种平滑的自测试解决方案。在提出的记忆测试算法中,结合了自测试和自修复机制。该方案可修复检测到的故障,并且易于与SoC设计集成。本文尝试实现存储器内建自修复(MBISR)体系结构来测试和修复嵌入式存储器的故障。它很小,并且在运行过程中支持快速测试而没有时间损失。该方法在速度和面积开销方面是一种较好的替代方法。因此,它在提高产量方面起着重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
3.10
自引率
0.00%
发文量
29
期刊最新文献
Algorithm of Predicting Heart Attack with using Sparse Coder Predicting Service Life of Polyethylene Pipes under Crack Expansion using "Random Forest" Method Experimental Study to Evaluate Antisymmetric Reinforced Concrete Deep Beams with Openings under Concentrated Loading Using Strut and Tie Model Study on Application of Arps Decline Curves for Gas Production Forecasting in Senegal Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1