{"title":"Growth and some surface characterization of tin Sulphide (SnS) thin film by two-electrode cell arrangement for photo absorption","authors":"A. Lasisi, A. B. Alabi, B. Taleatu, O. Babalola","doi":"10.4314/ijs.v23i2.4","DOIUrl":null,"url":null,"abstract":"This study presented deposition of tin sulphide (SnS) thin film using a two-electrode electrochemical cell arrangement. The bath electrolyte comprised tin sulphate (SnSO4 ), hydrated sodium thiosulphate (Na2S2O3∙5H2O) and sulphuric acid (H2SO4 ). The acid was used to adjust the pH of the bath. The deposited film was characterised using Surface Profilometer, X-Ray Diffractometer (XRD), Uv-Visible Spectrophotometer and four point probe technique. Surface profiling revealed that the film is continuous with thickness of about 60 nm. The XRD result showed that the film has orthorhombic crystal structure. Film's crystallite size was estimated as 0.61 nm and interplanar spacing as 0.29 nm. The Uv-visible Spectrophotometer result reveals that, the film has good absorbance but poor reflectance and transmittance in the visible light region. The film has direct allowed transition with energy band gap of 1.69 eV. Values of surface resistivity and conductivity were deduced from data obtained from Four-point probe studies as 5.12 x 10-4Ω-cm and 1.96 x 103Ω-1cm-1 respectively. The I-V characteristics curve of ITO/SnS/Ag structure is linear indicating an Ohmic contact between the substrate electrode and the deposited layer. It can therefore be suggested that the film can allow pathway for photoabsorption and also aid charge transfer in photovoltaic process. \nKeywords: tin sulphide, orthorhombic, electrochemical deposition, characterization, photovoltaic and surface resistivity.","PeriodicalId":13487,"journal":{"name":"Ife Journal of Science","volume":"10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ife Journal of Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4314/ijs.v23i2.4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This study presented deposition of tin sulphide (SnS) thin film using a two-electrode electrochemical cell arrangement. The bath electrolyte comprised tin sulphate (SnSO4 ), hydrated sodium thiosulphate (Na2S2O3∙5H2O) and sulphuric acid (H2SO4 ). The acid was used to adjust the pH of the bath. The deposited film was characterised using Surface Profilometer, X-Ray Diffractometer (XRD), Uv-Visible Spectrophotometer and four point probe technique. Surface profiling revealed that the film is continuous with thickness of about 60 nm. The XRD result showed that the film has orthorhombic crystal structure. Film's crystallite size was estimated as 0.61 nm and interplanar spacing as 0.29 nm. The Uv-visible Spectrophotometer result reveals that, the film has good absorbance but poor reflectance and transmittance in the visible light region. The film has direct allowed transition with energy band gap of 1.69 eV. Values of surface resistivity and conductivity were deduced from data obtained from Four-point probe studies as 5.12 x 10-4Ω-cm and 1.96 x 103Ω-1cm-1 respectively. The I-V characteristics curve of ITO/SnS/Ag structure is linear indicating an Ohmic contact between the substrate electrode and the deposited layer. It can therefore be suggested that the film can allow pathway for photoabsorption and also aid charge transfer in photovoltaic process.
Keywords: tin sulphide, orthorhombic, electrochemical deposition, characterization, photovoltaic and surface resistivity.
本文研究了采用双电极电化学电池结构沉积硫化锡薄膜的方法。电解液由硫酸锡(SnSO4)、水合硫硫酸钠(Na2S2O3∙5H2O)和硫酸(H2SO4)组成。这种酸被用来调节浴液的pH值。采用表面轮廓仪、x射线衍射仪(XRD)、紫外可见分光光度计和四点探针技术对沉积膜进行了表征。表面形貌分析表明,薄膜是连续的,厚度约为60 nm。XRD结果表明,该薄膜具有正交晶型结构。薄膜的晶粒尺寸为0.61 nm,面间距为0.29 nm。紫外可见分光光度计结果表明,该薄膜在可见光区具有良好的吸光度,但反射率和透射率较差。薄膜具有直接允许跃迁,能带隙为1.69 eV。从四点探针研究得到的数据推导出表面电阻率和电导率分别为5.12 x 10-4Ω-cm和1.96 x 103Ω-1cm-1。ITO/SnS/Ag结构的I-V特性曲线呈线性,表明衬底电极与沉积层之间存在欧姆接触。因此,可以认为薄膜可以为光吸收提供途径,也可以帮助光伏过程中的电荷转移。关键词:硫化锡,正交,电化学沉积,表征,光伏和表面电阻率。