{"title":"Role of slurry Additions on Chemical Mechanical Polishing of Cu/Ru/TEOS in H2O2-based Slurry","authors":"Chao Wang, Jianwei Zhou, Chenwei Wang, Xue Zhang","doi":"10.1109/CSTIC49141.2020.9282596","DOIUrl":null,"url":null,"abstract":"In this paper, the influence of a novel complex agent (NH<inf>4</inf>)<inf>2</inf>SO<inf>3</inf> and inhibitor 2,2’ -[[(methyl-1H-benzotriazol-1-yl) methyl]imino]diethanol (TT) based on hydrogen peroxide (H<inf>2</inf>O<inf>2</inf>) on Cu/Ru/TEOS was studied. Since our research group has studied the relationship between Cu and Ru before, we now make further supplement. The results showed that both Ru and TEOS increased with the increase of ammonium ion/NH<inf>4</inf><sup>+</sup>) concentration, and the mechanism was studied by means of electrochemistry, possibly because of the electrostatic attraction between the NH<inf>4</inf><sup>+</sup> ions and Ru, and the addition of ammonium ions may reduce the thickness of the double electric layer on the surface of TEOS. So the Ru and TEOS removal rate goes up.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"15 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the influence of a novel complex agent (NH4)2SO3 and inhibitor 2,2’ -[[(methyl-1H-benzotriazol-1-yl) methyl]imino]diethanol (TT) based on hydrogen peroxide (H2O2) on Cu/Ru/TEOS was studied. Since our research group has studied the relationship between Cu and Ru before, we now make further supplement. The results showed that both Ru and TEOS increased with the increase of ammonium ion/NH4+) concentration, and the mechanism was studied by means of electrochemistry, possibly because of the electrostatic attraction between the NH4+ ions and Ru, and the addition of ammonium ions may reduce the thickness of the double electric layer on the surface of TEOS. So the Ru and TEOS removal rate goes up.
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