Design and Implementation of a COTS, GaN–based Power Converter for Spacecraft Applications

D. Schofield
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引用次数: 1

Abstract

There is increasing interest in the use of Commercial Off-the-shelf (COTS) components in space, especially for relatively short (less than ten years) low earth orbit (LEO) missions. Using of COTS components can drastically reduce the lead time and cost. These devices however are not characterised for the space environment and how these components respond to the radiation environment encountered must be understood and appropriate mitigations must be taken during circuit design. A spacecraft power system will typically involve many stages of voltage conversion, and this is often most efficiently carried out using field-effect transistors (FETs). Of special concern is the destructive failure modes of silicon Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) under heavy ion bombardment caused by rupture of the isolated gate. Due to the lack of manufacturer's data the susceptibility of COTS parts cannot predicted with any degree of accuracy. Expensive and time consuming testing is required to have confidence that these devices can be used, and the manufacturer of COTS components can make minor changes to the die that do not materially impact performance but lead the part to have a different response to radiation. An alternative to the use of silicon MOSFETs is to use gallium nitride (GaN) FETs. Whilst not completely immune to radiation damage they are much less susceptible to catastrophic failure. When coupled with tested drivers and control circuits, they can be employed in radiation tolerant power converters with efficiencies at least as good as their silicon counterparts. At SSTL, GaN based power converters ranging from 1W to 300W design are implemented. In this paper, the implementation of a 100W converter used to supply an isolated, regulated 20.3V to a transmitter will be described. The design has a conversion efficiency of up to 94% and occupies the space previously taken up by a much more expensive bought in ‘brick’ converter.
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基于gan的航天器用COTS功率变换器的设计与实现
人们对在太空中使用商用现货(COTS)组件越来越感兴趣,特别是对于相对较短(不到十年)的低地球轨道(LEO)任务。使用COTS组件可以大大减少交货时间和成本。然而,这些装置的特点不适合空间环境,必须了解这些元件对所遇到的辐射环境的反应,并在电路设计期间采取适当的缓解措施。航天器电源系统通常会涉及许多阶段的电压转换,而这通常是最有效地使用场效应晶体管(fet)。特别关注的是在重离子轰击下由隔离栅破裂引起的硅金属氧化物半导体场效应晶体管(mosfet)的破坏模式。由于缺乏制造商的数据,无法以任何程度的精度预测COTS零件的易感性。为了确信这些器件可以使用,需要进行昂贵且耗时的测试,并且COTS组件的制造商可以对模具进行微小的更改,这些更改不会对性能产生实质性影响,但会导致部件对辐射产生不同的响应。使用硅mosfet的替代方案是使用氮化镓(GaN) fet。虽然不能完全免受辐射伤害,但它们对灾难性故障的影响要小得多。当与经过测试的驱动器和控制电路相结合时,它们可以用于耐辐射功率转换器,其效率至少与硅同类产品一样好。在SSTL,实现了从1W到300W设计的基于GaN的功率转换器。在本文中,将描述一个100W转换器的实现,该转换器用于向变送器提供隔离、稳压的20.3V。该设计具有高达94%的转换效率,并占据了以前由更昂贵的“砖”转换器所占据的空间。
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