Investigating extreme ultraviolet radiation chemistry with first-principles quantum chemistry calculations

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2020-07-01 DOI:10.1117/1.JMM.19.3.034601
Jonathan H. Ma, Han Wang, D. Prendergast, A. Neureuther, P. Naulleau
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引用次数: 1

Abstract

Abstract. In extreme ultraviolet (EUV) lithography, chemistry is driven by secondary electrons. A deeper understanding of these processes is needed. However, electron-driven processes are inherently difficult to experimentally characterize for EUV materials, impeding targeted material engineering. A computational framework is needed to provide information for rational material engineering and identification at a molecular level. We demonstrate that density functional theory calculations can fulfill this purpose. We first demonstrate that primary electron energy spectrum can be predicted accurately. Second, the dynamics of a photoacid generator upon excitation or electron attachment are studied with ab-initio molecular dynamics calculations. Third, we demonstrate that electron attachment affinity is a good predictor of reduction potential and dose to clear. The correlation between such calculations and experiments suggests that these methods can be applied to computationally screen and design molecular components of EUV material and speed up the development process.
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用第一性原理量子化学计算研究极紫外辐射化学
摘要在极紫外(EUV)光刻中,化学是由次级电子驱动的。需要对这些过程有更深入的了解。然而,电子驱动过程本身就难以通过实验表征EUV材料,阻碍了目标材料工程。需要一个计算框架来为合理的材料工程和分子水平的识别提供信息。我们证明密度泛函理论计算可以实现这一目的。我们首先证明了一次电子能谱是可以准确预测的。其次,用从头算分子动力学方法研究了光酸发生器在激发或电子附着时的动力学。第三,我们证明了电子附着亲和力是还原电位和清除剂量的良好预测因子。这些计算和实验之间的相关性表明,这些方法可以应用于计算筛选和设计极紫外光材料的分子组分,并加快开发过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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