{"title":"Millisecond response time measurements of high temperature gas sensors","authors":"P. Tobias, Hui Hu, M. Koochesfahani, R. Ghosh","doi":"10.1109/ICSENS.2004.1426282","DOIUrl":null,"url":null,"abstract":"We present a new apparatus for measuring the response times of a gas sensor with millisecond resolution, while also capturing the slower components of the response such as the steady state value. Laser induced fluorescence (LIF) imaging was used to quantify the exchange rate of the sensor's ambient gas. The millisecond response of high temperature (up to 950 K) field effect SiC sensors for detection of hydrogen containing gases was characterized.","PeriodicalId":20476,"journal":{"name":"Proceedings of IEEE Sensors, 2004.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2004.1426282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We present a new apparatus for measuring the response times of a gas sensor with millisecond resolution, while also capturing the slower components of the response such as the steady state value. Laser induced fluorescence (LIF) imaging was used to quantify the exchange rate of the sensor's ambient gas. The millisecond response of high temperature (up to 950 K) field effect SiC sensors for detection of hydrogen containing gases was characterized.
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