S. Maddox, W. Sun, Z. Lu, H. Nair, J. Campbell, S. R. Bank
{"title":"InAs avalanche photodiode with improved electric field uniformity","authors":"S. Maddox, W. Sun, Z. Lu, H. Nair, J. Campbell, S. R. Bank","doi":"10.1109/DRC.2012.6256992","DOIUrl":null,"url":null,"abstract":"Here, we report a significant, ~5x, increase in the room temperature multiplication gain for InAs APD's, as compared to the state-of-the-art at 10 V reverse bias.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"24 1","pages":"253-254"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Here, we report a significant, ~5x, increase in the room temperature multiplication gain for InAs APD's, as compared to the state-of-the-art at 10 V reverse bias.
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