{"title":"Silicon nitride deposited by direct photolysis of NH/sub 3/ and SiH/sub 4/ at 185 nm and its application to InP MISFETs","authors":"N. Proust, M. Petitjean, J. Perrin","doi":"10.1109/ICIPRM.1991.147436","DOIUrl":null,"url":null,"abstract":"The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<>
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