A Combined Spin Coating and Lift-Off Process (CSLOP) to Realize Thick Silver Microstructures with a High Aspect Ratio for IoT Applications

Chi-Fu Huang, Ray-Tung Chiang, Yu-Ting Cheng
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引用次数: 1

Abstract

This paper presents a new manufacturing technology, i.e., combined spin coating and lift-off process (CSLOP), for the fabrication of Ag interconnects and microstructures such as interconnect lines, interdigitated capacitors and spiral inductors with a high aspect ratio of thickness vs. width. For the interconnect fabrication using the thin film CSLOP, Ag lines with a width range from 10 to $100\ \mu \mathrm{m}$ can be realized with an electrical resistivity of $\sim 2.36\ \mu\Omega\cdot \text{cm}$, only 1.48 times higher than that of bulk silver ($1.59\ \mu\Omega\cdot \text{cm}$), which is the lowest resistive Ag line ever reported. For high performance on-chip flexible passive fabrication using the thick film CSLOP, the interdigitated capacitors with an electrode thickness of $70\ \mu \mathrm{m}$ can exhibit a capacitance of 0.502pF@10 kHz and the 5-turn, $70\ \mu \mathrm{m}$ thick spiral inductor can have high $Q$ performance with a highest inductance density up to 9.7 nH/mm2. Because the process scheme can be applied using other metal/metal oxide nanoparticles, the CSLOP can facilitate the realization of highly sensitive sensors and excellent heterogeneous integration for IOT applications.
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结合旋转涂层和提升工艺(CSLOP)实现物联网应用中具有高宽高比的厚银微结构
本文提出了一种新的制造技术,即复合自旋镀膜和升离工艺(CSLOP),用于制造具有高宽厚比的银互连线和微结构,如互连线、交叉电容和螺旋电感。对于使用薄膜CSLOP的互连制造,可以实现宽度从10到$100\ \mu \mathrm{m}$的银线,其电阻率为$\sim 2.36\ \mu\Omega\cdot \text{cm}$,仅比体银($1.59\ \mu\Omega\cdot \text{cm}$)高1.48倍,这是迄今为止报道的最低电阻银线。对于使用厚膜CSLOP的高性能片上柔性无源制造,电极厚度为$70\ \mu \mathrm{m}$的交叉电容具有0.502pF@10 kHz的电容,5匝$70\ \mu \mathrm{m}$厚螺旋电感具有较高的$Q$性能,最高电感密度可达9.7 nH/mm2。由于该工艺方案可以应用于其他金属/金属氧化物纳米颗粒,因此CSLOP可以促进实现高灵敏度传感器和物联网应用的出色异构集成。
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