Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells

S. Kuo, Jui‐Fu Yang, F. Lai, Chun-Jung Lin
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Abstract

Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78% for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3%.
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太阳电池磁控溅射前驱体硒化法制备Cu2ZnSnSe4薄膜
采用射频(RF)磁控溅射法制备Cu2ZnSnSe4 (CZTSe)吸收体在Mo/玻璃衬底上。前驱体在基体温度为550℃的硒蒸气中退火,转化为CZTSe吸收剂。利用x射线衍射(XRD)、拉曼光谱(Raman)、光致发光(PL)、能谱仪(EDS)和太阳模拟器对CZTSe薄膜进行了详细的表征。结果表明,czyse薄膜的结构和光学性能具有良好的稳定性。p型CZTSe吸收体在室温下的峰值低于0.9 eV。当Voc= 0.21 V, Jsc= 27.1 mA/cm2, FF= 31.3%时,AZO/ZnO/CdS/CZTSe/Mo的太阳能电池的最佳转换效率为1.78%,为0.13 cm2。
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