S. Mishra, E. Geiss, Aditya Kumar, A. Malinowski, Gao Wen Zhi, Wenhe Lin, B. Indajang, D. Slisher
{"title":"Middle of Line: Challenges and Their Resolution for FinFET Technology","authors":"S. Mishra, E. Geiss, Aditya Kumar, A. Malinowski, Gao Wen Zhi, Wenhe Lin, B. Indajang, D. Slisher","doi":"10.1109/ASMC49169.2020.9185205","DOIUrl":null,"url":null,"abstract":"This paper discusses major challenges faced in middle of line (MOL) manufacturing for FinFET technology. This throws light on major yield detractors for inline wafer yield as well as challenges involved at wafer sort. Since contact resistance is one of the critical parameters for device performance, it presents major challenges and resolutions for device enhancement due to a reduction in contact resistances. For FinFET, contact to poly pitch is very small, and as a result there were some reliability challenges in the initial development phase, the resolution of which is discussed in detail.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"69 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper discusses major challenges faced in middle of line (MOL) manufacturing for FinFET technology. This throws light on major yield detractors for inline wafer yield as well as challenges involved at wafer sort. Since contact resistance is one of the critical parameters for device performance, it presents major challenges and resolutions for device enhancement due to a reduction in contact resistances. For FinFET, contact to poly pitch is very small, and as a result there were some reliability challenges in the initial development phase, the resolution of which is discussed in detail.
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