N. Tansu, Ying-lan Chang, T. Takeuchi, D. Bour, S. Corzine, M. Tan, L. Mawst
{"title":"Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers","authors":"N. Tansu, Ying-lan Chang, T. Takeuchi, D. Bour, S. Corzine, M. Tan, L. Mawst","doi":"10.1109/LEOS.2001.969312","DOIUrl":null,"url":null,"abstract":"Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"2 1","pages":"336-337 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.969312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.
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