Carriers multiplication in neighboring surfactant-free silicon nanocrystals produced by 3D-surface engineering in liquid medium.

V. Švrček, D. Mariotti, K. Matsubara, M. Kondo
{"title":"Carriers multiplication in neighboring surfactant-free silicon nanocrystals produced by 3D-surface engineering in liquid medium.","authors":"V. Švrček, D. Mariotti, K. Matsubara, M. Kondo","doi":"10.1109/PVSC.2012.6317577","DOIUrl":null,"url":null,"abstract":"Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2012.6317577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
液体介质中三维表面工程制备的邻近无表面活性剂硅纳米晶体中的载流子增殖。
载流子在硅纳米晶体(Si-ncs)中的增殖,有望大大提高太阳能电池的转换效率,可以克服理论限制。由于分离的量子切割效应,Si-ncs的接近性是载流子倍增的重要因素。在本研究中,我们介绍了直接在水中进行Si-ncs三维表面工程的研究结果。因此,在不使用任何表面活性剂的情况下,可以接近Si-ncs。该方法是基于ns激光处理分散在液体溶液中的Si-ncs。我们研究了纳米激光加工制备和表面工程的Si-ncs的光致发光量子产率(发射光子数和吸收光子数之比)与激发波长的关系。我们的研究结果表明,激光处理引起的球形颗粒中硅纳米粒子的接近性也可能促进载流子的增殖。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Ultra-Lightweight PV module design for Building Integrated Photovoltaics Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applications Inverse Metamorphic III-V/epi-SiGe Tandem Solar Cell Performance Assessed by Optical and Electrical Modeling Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management An autocorrelation-based copula model for producing realistic clear-sky index and photovoltaic power generation time-series
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1