Preferential sputtering of metal oxide mixture thin films

M. Mende, F. Carstens, H. Ehlers, D. Ristau
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引用次数: 1

Abstract

Metal oxide mixture materials enable the production of dielectric multilayer coatings for highest power laser applications. During thin film deposition, when using sputtering techniques in combination with composite target materials, preferential sputtering occurs on the target surface. The quantitative analysis of the mixture thin film composition, usually performed by ion beam based depth profiling methods, is also affected by preferential sputtering. To gain a deeper understanding, the atomic composition variation of sputtered mixture material surfaces is calculated applying the Monte Carlo simulation program tridyn. The simulation results are compared to the atomic composition gradient measured via depth profiling x-ray photoelectron spectroscopy for mixture thin films composed of HfO2, Sc2O3, Al2O3, and SiO2. The deviations between the experimental and simulated data are discussed with respect to the different mixture material combinations.
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金属氧化物混合薄膜的优先溅射
金属氧化物混合材料使生产最高功率激光应用的介电多层涂层成为可能。在薄膜沉积过程中,当溅射技术与复合靶材料结合使用时,靶表面会发生优先溅射。混合薄膜成分的定量分析通常采用基于离子束的深度分析方法,也受到优先溅射的影响。为了更深入地了解溅射混合材料表面的原子组成变化,应用蒙特卡罗模拟程序tridyn计算了溅射混合材料表面的原子组成变化。将模拟结果与深度剖面x射线光电子能谱测量的HfO2、Sc2O3、Al2O3和SiO2混合薄膜的原子组成梯度进行了比较。讨论了不同混合材料组合下实验数据与模拟数据之间的偏差。
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