Cryogenic MMIC low-noise amplifiers for V-band

M. Varonen, L. Samoska, P. Kangaslahti, A. Fung, R. Gawande, M. Soria, A. Peralta, R. Lin, R. Lai, X. Mei, S. Sarkozy
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引用次数: 4

Abstract

In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50–75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.
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低温MMIC低噪声v波段放大器
在本文中,我们报道了v波段(50-75 GHz)的超低噪声放大器模块和放大器模块链。放大器芯片采用诺斯罗普·格鲁曼公司(NGC)的35纳米InP HEMT技术制造,并使用氧化铝e平面波导探头封装在WR15波导外壳中。当低温冷却至21 K时,放大器模块的噪声温度从50到75 GHz达到18至27 K。当通过聚酯膜真空窗测量时,两个放大器模块的级联在58 GHz时达到18.5 K的接收器噪声温度。第二条链在整个v波段的测量接收器噪声温度在20至28 K之间。据作者所知,这是迄今为止报道的v波段最低LNA噪声温度。
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