H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori
{"title":"W-band InP Gunn diodes with optimized linearly graded profiles","authors":"H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori","doi":"10.1109/ICIPRM.1991.147353","DOIUrl":null,"url":null,"abstract":"The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"274 1","pages":"280-283"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<>
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