Breakthroughs in chip embedding technologies leading to the emergence of further miniaturised system-in-packages

D. Manessis, L. Boettcher, A. Ostmann, S. Karaszkiewicz, H. Reichl
{"title":"Breakthroughs in chip embedding technologies leading to the emergence of further miniaturised system-in-packages","authors":"D. Manessis, L. Boettcher, A. Ostmann, S. Karaszkiewicz, H. Reichl","doi":"10.1109/IMPACT.2009.5382147","DOIUrl":null,"url":null,"abstract":"allows a very high degree of miniaturization by stacking multiple layers of embedded thin components. This paper shows the realisation of embedded chip QFN-packages (Quad Flat No-Lead) with a size of 10mmx10mm which were manufactured at prototype level at 10„x14„ panels. The embedded chip in the package has a pad pitch of 100µm and the resultant QFN package has a total number of 84I/Os at 400µm footprint pitch. State-of-the-art developments in semi-additive processes by employment of laserdirect- imaging technology (LDI) have demonstrated very fine 18µm lines with 10µm space between them for the final package copper routing. The work in this paper provides evidence for chip embedding capability at very fine chip pad pitch of 100µm and discusses the technology limits. The present work at research prototype level frames the main activities in the EU-Hermes project towards the industrialisation of chip embedding technologies.","PeriodicalId":6410,"journal":{"name":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","volume":"71 1","pages":"174-177"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2009.5382147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

allows a very high degree of miniaturization by stacking multiple layers of embedded thin components. This paper shows the realisation of embedded chip QFN-packages (Quad Flat No-Lead) with a size of 10mmx10mm which were manufactured at prototype level at 10„x14„ panels. The embedded chip in the package has a pad pitch of 100µm and the resultant QFN package has a total number of 84I/Os at 400µm footprint pitch. State-of-the-art developments in semi-additive processes by employment of laserdirect- imaging technology (LDI) have demonstrated very fine 18µm lines with 10µm space between them for the final package copper routing. The work in this paper provides evidence for chip embedding capability at very fine chip pad pitch of 100µm and discusses the technology limits. The present work at research prototype level frames the main activities in the EU-Hermes project towards the industrialisation of chip embedding technologies.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
芯片嵌入技术的突破导致进一步小型化系统级封装的出现
通过堆叠多层嵌入式薄组件,实现非常高的小型化程度。本文展示了尺寸为10mmx10mm的嵌入式芯片qfn封装(Quad Flat No-Lead)的实现,该封装在10“x14”面板的原型水平上制造。封装中的嵌入式芯片的焊盘间距为100 μ m,由此产生的QFN封装在400 μ m占地间距下具有84I/ o总数。采用激光直接成像技术(LDI)的半增材工艺的最新发展已经展示了非常精细的18微米线,它们之间的空间为10微米,用于最终封装铜布线。本文的工作提供了在极细的芯片衬垫间距为100µm时芯片嵌入能力的证据,并讨论了技术限制。目前在研究原型水平的工作框架的主要活动在欧盟赫尔墨斯项目对芯片嵌入技术的工业化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Estimation design of MEMS-based inertial navigation systems with noise coupling input saturation: Robust approach Experimental investigation and finite element analysis of bump wafer probing Optimum design of contact springs used in registered jack connectors Optimization design of cup-shaped copper heat spreaders for high-power InGaN/sapphire LEDs The high performance electrodeposited copper foil for next generation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1