{"title":"Charging damage and SOI","authors":"T. Hook","doi":"10.1109/ICICDT.2005.1502599","DOIUrl":null,"url":null,"abstract":"SOI technologies offer the highest possible performance in today's silicon spectrum, and are used for the very fastest processor requirements. In addition to the high speed achievable with this technology, there is also unusually high robustness against inline charging damage. In this paper, we review data and theories pertinent to SOI charging immunity and design rules.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"24 1","pages":"87-90"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2005.1502599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
SOI technologies offer the highest possible performance in today's silicon spectrum, and are used for the very fastest processor requirements. In addition to the high speed achievable with this technology, there is also unusually high robustness against inline charging damage. In this paper, we review data and theories pertinent to SOI charging immunity and design rules.
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