The Righi - Leduc effect in cadmium arsenide

D. Lovett, D. Ballentyne
{"title":"The Righi - Leduc effect in cadmium arsenide","authors":"D. Lovett, D. Ballentyne","doi":"10.1088/0508-3443/18/10/304","DOIUrl":null,"url":null,"abstract":"Cadmium arsenide has a large concentration of high-mobility carriers (electrons) and possesses a small lattice thermal conductivity. It should therefore exhibit a large Righi-Leduc effect. This effect has been measured in the temperature range 300-64°K in magnetic fields of 500-12 × 103 Oe and results shown to agree with predicted values for a degenerate semiconductor. Values of the Righi-Leduc co-efficient of 066 × 104 cm2 v-1 sec-1 at room temperature and 14 × 104 cm2 v-1 sec-1 at 85°K have been obtained in low magnetic fields.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"19 1","pages":"1399-1402"},"PeriodicalIF":0.0000,"publicationDate":"1967-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/10/304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

Cadmium arsenide has a large concentration of high-mobility carriers (electrons) and possesses a small lattice thermal conductivity. It should therefore exhibit a large Righi-Leduc effect. This effect has been measured in the temperature range 300-64°K in magnetic fields of 500-12 × 103 Oe and results shown to agree with predicted values for a degenerate semiconductor. Values of the Righi-Leduc co-efficient of 066 × 104 cm2 v-1 sec-1 at room temperature and 14 × 104 cm2 v-1 sec-1 at 85°K have been obtained in low magnetic fields.
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砷化镉中的Righi - Leduc效应
砷化镉具有高浓度的高迁移率载流子(电子)和小的晶格热导率。因此,它应该表现出很大的Righi-Leduc效应。在300-64°K的温度范围内,在500-12 × 103 Oe的磁场中测量了这种效应,结果与简并半导体的预测值一致。在低磁场条件下,室温下的Righi-Leduc系数为066 × 104 cm2 v-1 sec-1, 85°K时为14 × 104 cm2 v-1 sec-1。
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