A 0.45-V input on-chip gate boosted (OGB) buck converter in 40-nm CMOS with more than 90% efficiency in load range from 2µW to 50µW

Xin Zhang, Po-Hung Chen, Y. Ryu, K. Ishida, Yasuyuki Okuma, Kazunori Watanabe, T. Sakurai, M. Takamiya
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引用次数: 19

Abstract

A 0.45-V input, 0.4-V output on-chip gate boosted (OGB) buck converter with clock gated digital PWM controller in 40-nm CMOS achieved the highest efficiency to date with the output power less than 40μW. A linear delay trimming by a logarithmic stress voltage (LSV) scheme to compensate for the die-to-die delay variations of a delay line in the PWM controller with good controllability is also proposed.
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一种0.45 v输入片上栅极升压(OGB) 40纳米CMOS降压变换器,在2µW至50µW负载范围内效率超过90%
采用时钟门控数字PWM控制器的片上栅极升压(OGB)降压变换器采用40纳米CMOS工艺,输入0.45 v,输出0.4 v,实现了迄今为止的最高效率,输出功率小于40μW。本文还提出了一种利用对数应力电压(LSV)来补偿延迟线模间延迟变化的线性延迟修整方案,该方案具有良好的可控性。
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