Kazuhiro Takahashi, M. Mita, Hiroyuki Fujita, H. Toshiyoshi
{"title":"Topological layer switch technique for monolithically integrated electrostatic XYZ-stage","authors":"Kazuhiro Takahashi, M. Mita, Hiroyuki Fujita, H. Toshiyoshi","doi":"10.1109/MEMSYS.2007.4432992","DOIUrl":null,"url":null,"abstract":"We report a monolithic XYZ-stage with electrostatic comb-mechanisms integrated in only two silicon layers and by three photolithography steps that topologically switches the allocation of layer for electrical and elastic components. The XY-stage moved in the X- and the Y-direction by 19 mum independently, and also in the diagonal direction. We have successfully demonstrated maximum 2.12 mum in the Z-direction with applied voltage of 200 V.","PeriodicalId":6388,"journal":{"name":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2007.4432992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
We report a monolithic XYZ-stage with electrostatic comb-mechanisms integrated in only two silicon layers and by three photolithography steps that topologically switches the allocation of layer for electrical and elastic components. The XY-stage moved in the X- and the Y-direction by 19 mum independently, and also in the diagonal direction. We have successfully demonstrated maximum 2.12 mum in the Z-direction with applied voltage of 200 V.
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