Improvement in sidewall roughness of MEMS X-ray optics

Masahiro Ikuta, Y. Ezoe, I. Mitsuishi, T. Ogawa, T. Kakiuchi, T. Ohashi, K. Mitsuda
{"title":"Improvement in sidewall roughness of MEMS X-ray optics","authors":"Masahiro Ikuta, Y. Ezoe, I. Mitsuishi, T. Ogawa, T. Kakiuchi, T. Ohashi, K. Mitsuda","doi":"10.1109/OMN.2013.6659085","DOIUrl":null,"url":null,"abstract":"Low-cost and high-resolution X-ray optics based on MEMS technologies is proposed and being developed by our group. We have succeeded in soft X-ray imaging using sample optics. However, roughness of the side walls etched through a thin silicon wafer, which are used as X-ray mirrors, limited the image resolution. In this paper, a new process condition is tested in the dry etching process to achieve better resolution. By simply changing the etching mask from aluminum to thick photoresist plus aluminum, the side wall roughness is improved by a factor of ~3 to about 38 nm at 200 um scale.","PeriodicalId":6334,"journal":{"name":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2013.6659085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Low-cost and high-resolution X-ray optics based on MEMS technologies is proposed and being developed by our group. We have succeeded in soft X-ray imaging using sample optics. However, roughness of the side walls etched through a thin silicon wafer, which are used as X-ray mirrors, limited the image resolution. In this paper, a new process condition is tested in the dry etching process to achieve better resolution. By simply changing the etching mask from aluminum to thick photoresist plus aluminum, the side wall roughness is improved by a factor of ~3 to about 38 nm at 200 um scale.
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MEMS x射线光学侧壁粗糙度的改进
本课题组提出并正在开发基于MEMS技术的低成本、高分辨率x射线光学器件。我们成功地利用样品光学进行了软x射线成像。然而,通过用作x射线反射镜的薄硅晶片蚀刻的侧壁的粗糙度限制了图像分辨率。为了获得更好的分辨率,本文在干刻蚀过程中测试了一种新的工艺条件。通过简单地将蚀刻膜从铝改为厚光刻胶加铝,在200um尺度下,侧壁粗糙度提高了约3倍,达到约38 nm。
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