Yuxiao Fang, W. Y. Xu, I. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao
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引用次数: 0
Abstract
In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO2) irradiation.
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