Determining defect & strain effects on active layer mobility

Abstract

Here we provide a unified treatment for defect analysis by leveraging ideal data provided by ASTM Standard F723. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) data has been used to directly measure mobility profiles. Deviations of these values from the ideal defect-free, and fully relaxed systems provides a usable measure of the total effect of defects and/or strain in doped silicon materials.