{"title":"Silica layers formed on In/sub 0.53/Ga/sub 0.47/As by downstream PECVD","authors":"V. Montgomery, D.G. Kimpton, J. Swanson","doi":"10.1109/ICIPRM.1991.147438","DOIUrl":null,"url":null,"abstract":"In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/ interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In/sub 0.53/Ga/sub 0.47/As in contact with SiO/sub 2/ prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"92 1","pages":"559-562"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/ interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In/sub 0.53/Ga/sub 0.47/As in contact with SiO/sub 2/ prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material.<>
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