Semi-empirical optimization of vertical channel doping profile of field effect transistor using recursive approach

Abstract

In this discourse, estimation of optimum vertical channel doping profile of Field Effect Transistor (FET) is carried out using a semi-empirical methodology. Initially, technology specific Current-Voltage (I-V) characteristics are formulated as the objective and constraint functions of an orthogonal convex optimization problem. Then optimum vertical doping profile for the conducting-path (channel) is augmented from these functions recursively. The foremost merit of this semi-empirical technique can be attributed to its promptness in predicting the globally optimal doping profile with reliable accuracy and least human oversight, which is an imperative surrogate in the realm of Metal Oxide Semiconductor (MOS) fabrication.