Recent developments of numerical calculation in crystal growth of SiC

Abstract

The eŠect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (Cor Siface 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4HSiC was more stable than that of 6HSiC when a grown crystal was doped with nitrogen using Cface 4Hand 6HSiC as seed crystals. In contrast, formation of 6HSiC was favored over 4HSiC when Siface 4Hand 6H SiC seed crystals were used. Meanwhile, the formation of 4HSiC was more stable than that of 6HSiC when aluminum was the dopant and Cand Sifaces of 6HSiC were used as seed crystals. 6HSiC was preferred to grow rather than 4HSiC in the cases of C and Sifaces of 4HSiC as seed crystals.