半導体表面における光励起キャリアダイナミクスの時間・空間分解計測;半導体表面における光励起キャリアダイナミクスの時間・空間分解計測;Spatio-temporal Observation of Photogenerated Carrier Dynamics on a Semiconductor Surface
{"title":"半導体表面における光励起キャリアダイナミクスの時間・空間分解計測;半導体表面における光励起キャリアダイナミクスの時間・空間分解計測;Spatio-temporal Observation of Photogenerated Carrier Dynamics on a Semiconductor Surface","authors":"K. Fukumoto","doi":"10.3131/JVSJ2.60.388","DOIUrl":null,"url":null,"abstract":"27, 2017, Accepted June 20, 2017 ) A system for time-resolved photoemission electron microscopy ( TR PEEM ) conducted with femtosecond laser pulses has been de-veloped to explore the photogenerated electron dynamics on semiconductor surfaces. Attained space and time resolutions were 100 nm and 100 fs, respectively. The present manuscript introduces the TR PEEM system, and also reports the observation of diŠerent photogenerated electron lifetimes in diŠerent nanoscale structural defects randomly distributed on a semiconductor surface. The results were explained based on Schockley-Read-Hall ( SRH ) model relating the carrier recombination time and the defect state density. The","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"23 1","pages":"388-391"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Vacuum Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3131/JVSJ2.60.388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
27, 2017, Accepted June 20, 2017 ) A system for time-resolved photoemission electron microscopy ( TR PEEM ) conducted with femtosecond laser pulses has been de-veloped to explore the photogenerated electron dynamics on semiconductor surfaces. Attained space and time resolutions were 100 nm and 100 fs, respectively. The present manuscript introduces the TR PEEM system, and also reports the observation of diŠerent photogenerated electron lifetimes in diŠerent nanoscale structural defects randomly distributed on a semiconductor surface. The results were explained based on Schockley-Read-Hall ( SRH ) model relating the carrier recombination time and the defect state density. The
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
