J. Springer, W. Wriggins, Juergen Kusterer, K. Zotter, M. Current
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Abstract
Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices.
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