E. Rao, A. Ougazzaden, Y. Gao, H. Thibierge, A. Pougnet, A. Mircea, E. Lugagne-Delpond, P. Voisin
{"title":"Photoluminescence investigation of InGaAs-InGaAsP multiquantum wells for laser devices","authors":"E. Rao, A. Ougazzaden, Y. Gao, H. Thibierge, A. Pougnet, A. Mircea, E. Lugagne-Delpond, P. Voisin","doi":"10.1109/ICIPRM.1991.147302","DOIUrl":null,"url":null,"abstract":"The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the approximately 1.55 mu m wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"111 1","pages":"97-100"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the approximately 1.55 mu m wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity.<>
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