E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel
{"title":"Monolithic integrated laser DHBT OEICs for optical fibre communication","authors":"E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel","doi":"10.1109/ICIPRM.1991.147402","DOIUrl":null,"url":null,"abstract":"The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"16 1","pages":"419-422"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<>
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