J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn
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引用次数: 1
Abstract
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.
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