Some Key Modifications of Theory Required to Understand the Leakage Current Mechanisms for MIM Capacitors used in Dram Technology

Abstract

Two important key modifications of theory of leakage current mechanisms for MIM capacitors will be proposed. The first modification is the proposal of a new unified theory for the image force dielectric constant used in the Schottky emission and Poole-Frenkel equations. The second modification is that when the leakage current mechanism is Schottky emission modified by tunneling, a different approach has to be used to evaluate the Schottky barrier height. They are important, for example, for 4.6 nm ZAZ MIM capacitors used in DRAM technology.