{"title":"Reliability study of AlTi/TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications","authors":"A. Andrei, C. Malhaire, S. Brida, D. Barbier","doi":"10.1109/ICSENS.2004.1426374","DOIUrl":null,"url":null,"abstract":"This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.","PeriodicalId":20476,"journal":{"name":"Proceedings of IEEE Sensors, 2004.","volume":"57 1","pages":"1125-1128 vol.3"},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2004.1426374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.
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