{"title":"InP Schottky diodes and MESFETs with enhanced barrier height using InP/sub x/O/sub y/ films","authors":"D. Kusumi, Y. Ohkubo, M. Ura, M. Ohmori","doi":"10.1109/ICIPRM.1991.147355","DOIUrl":null,"url":null,"abstract":"An InP/sub x/O/sub y/ film formed by P/sub 2/O/sub 5/ evaporation and annealing below 380 degrees C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxO/sub y/ film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mm phi )/InP/sub x/O/sub y//InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InP/sub x/O/sub y/-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 mu m gate length FET was demonstrated.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"298 1","pages":"288-291"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An InP/sub x/O/sub y/ film formed by P/sub 2/O/sub 5/ evaporation and annealing below 380 degrees C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxO/sub y/ film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mm phi )/InP/sub x/O/sub y//InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InP/sub x/O/sub y/-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 mu m gate length FET was demonstrated.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
