Viscoelastic Modeling for Heterogeneous Fan-out Wafer Molding Process

S. Yeh, P. Lin, K. C. Lee, M. Yew, C. C. Yang, J. H. Wang, C. Hsu, P. Lai, Dion Tseng, S. Cheng, S. Jeng
{"title":"Viscoelastic Modeling for Heterogeneous Fan-out Wafer Molding Process","authors":"S. Yeh, P. Lin, K. C. Lee, M. Yew, C. C. Yang, J. H. Wang, C. Hsu, P. Lai, Dion Tseng, S. Cheng, S. Jeng","doi":"10.1109/ECTC32862.2020.00174","DOIUrl":null,"url":null,"abstract":"Fan-out wafer level package (FOWLP) is a disruptive technology in the semiconductor packaging industry. Demand for higher system performance has caused an increase in both package size and the complexity of heterogeneous integration. Large warpage, which arises from significant volume changes in molded underfill (MUF) during the curing and subsequent assembly processes, is a top process and reliability issue.The selection of molding material is critical importance in FOWLP, as the material must meet multiple manufacturing requirements. In this study, an integrated modeling approach is used to predict fan out wafer form warpage. This approach considers both chemical shrinkage and cure dependency of molded underfill. Viscoelastic relaxation behavior over the course of compression molding cured (namely CMC) and post molding cured (namely PMC) has been carefully modeled. Measurements of material properties used in our models were characterized through differential scanning calorimetry (DSC) and dynamic mechanical analysis (DMA). The result of our integrated modeling approach was validated by comparing actual warpage data of various temperature loading conditions. Predicted warpage values are in good agreement with in-line experimental data.Furthermore, we apply this methodology to study the wafer fan-out ratio and Cu density effect. It is shown that Cu density effect is not sensitive, and higher wafer fan-out ratio induces larger warpage due to more molding volume.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"51 1","pages":"1081-1086"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32862.2020.00174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Fan-out wafer level package (FOWLP) is a disruptive technology in the semiconductor packaging industry. Demand for higher system performance has caused an increase in both package size and the complexity of heterogeneous integration. Large warpage, which arises from significant volume changes in molded underfill (MUF) during the curing and subsequent assembly processes, is a top process and reliability issue.The selection of molding material is critical importance in FOWLP, as the material must meet multiple manufacturing requirements. In this study, an integrated modeling approach is used to predict fan out wafer form warpage. This approach considers both chemical shrinkage and cure dependency of molded underfill. Viscoelastic relaxation behavior over the course of compression molding cured (namely CMC) and post molding cured (namely PMC) has been carefully modeled. Measurements of material properties used in our models were characterized through differential scanning calorimetry (DSC) and dynamic mechanical analysis (DMA). The result of our integrated modeling approach was validated by comparing actual warpage data of various temperature loading conditions. Predicted warpage values are in good agreement with in-line experimental data.Furthermore, we apply this methodology to study the wafer fan-out ratio and Cu density effect. It is shown that Cu density effect is not sensitive, and higher wafer fan-out ratio induces larger warpage due to more molding volume.
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非均匀扇形圆片成型过程的粘弹性建模
扇出晶圆级封装(FOWLP)是半导体封装行业的一项颠覆性技术。对更高系统性能的需求导致了包大小和异构集成复杂性的增加。在固化和随后的装配过程中,由于模制下填料(MUF)的显著体积变化而产生的大翘曲是一个首要的工艺和可靠性问题。成型材料的选择在FOWLP中至关重要,因为材料必须满足多种制造要求。在本研究中,采用了一种集成的建模方法来预测扇形晶圆的翘曲。这种方法同时考虑了化学收缩和固化对模压下填料的依赖性。在压缩成型固化(即CMC)和成型后固化(即PMC)过程中的粘弹性松弛行为已经仔细建模。我们的模型中使用的材料性能测量是通过差示扫描量热法(DSC)和动态力学分析(DMA)来表征的。通过比较不同温度载荷条件下的实际翘曲数据,验证了综合建模方法的有效性。预测翘曲值与在线实验数据吻合良好。此外,我们将此方法应用于晶圆扇出比和Cu密度效应的研究。结果表明,Cu密度效应不敏感,晶圆扇出比越大,模体积越大,导致翘曲越大。
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