Localized back-side heating for low-temperature wafer-level bonding

J. Mitchell, K. Najafi
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引用次数: 1

Abstract

A new wafer-level method has been developed for localized heating of the bond region between two wafers. Using this method, one of the two wafers to be bonded is heated from the backside, and the other is cooled from the backside, so that heat flows through the bond regions while the device regions stay relatively cool. In this work, integrated temperature sensors were used to measure the temperature at different distances from the bond region during Si to glass and Si to Si (with a -7 mum SiO2) bonds in order to verify the utility of this bonding technique. The temperature was measured to be only 25% and 37% of the bond ring temperature at 650 mum away from the bond ring for a Si to glass bond and 250 mum away from the bond ring for a Si to Si (with a ~7 mum oxide) bond respectively for bond ring temperatures up to 410degC and 200degC. Furthermore a successful Au-Si eutectic bond was demonstrated using this technique.
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局部背面加热,用于低温晶圆级粘合
本文提出了一种新的晶圆级方法,用于对两个晶圆之间的键合区域进行局部加热。使用这种方法,两个晶圆中的一个从背面加热,另一个从背面冷却,这样热量流过键合区域,而器件区域保持相对凉爽。在这项工作中,为了验证这种键合技术的实用性,使用集成温度传感器测量了Si到玻璃和Si到Si(含-7 mum SiO2)键合过程中距离键合区域不同距离的温度。当键环温度高达410℃和200℃时,在距离硅-玻璃键环650℃和距离Si - Si键环250℃时,测得的温度分别为键环温度的25%和37%。此外,利用该技术成功地证明了金硅共晶键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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