Numerical Evaluation on the Nano-rod Array on a N-side-up Thin-film GaAs Solar Cells

R. S. Davidsen, P. T. Tang, I. Mizushima, Sune Thorsteinsson, P. Poulsen, Jesper Frausig, Ørnulf Nordseth, O. Hansen
{"title":"Numerical Evaluation on the Nano-rod Array on a N-side-up Thin-film GaAs Solar Cells","authors":"R. S. Davidsen, P. T. Tang, I. Mizushima, Sune Thorsteinsson, P. Poulsen, Jesper Frausig, Ørnulf Nordseth, O. Hansen","doi":"10.1109/PVSC.2017.8366677","DOIUrl":null,"url":null,"abstract":"We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance below 0.5% across a 156×156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional all-black solar 9-cell panels. The black bus-bars (e.g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"28 1","pages":"2885-2888"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2017.8366677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance below 0.5% across a 156×156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional all-black solar 9-cell panels. The black bus-bars (e.g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency.
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n面朝上薄膜砷化镓太阳能电池纳米棒阵列的数值评价
我们提出了黑硅纹理和黑化母线串的组合,作为获得全黑太阳能电池板的潜在方法,同时使用传统的前接触太阳能电池。黑硅是通过无掩膜反应离子蚀刻实现的,在156×156 mm2硅片上的总平均反射率低于0.5%。在反射率方面比较了四种不同的获得黑化母线串的方法,并使用其中两种方法(即氧化铜和蚀刻焊料)来制造功能性全黑太阳能9电池板。黑色母线(例如,由氧化铜制成)在整个可见波长范围内的反射率低于3%。黑色硅电池和黑色母线的组合产生了美观的全黑面板,基于传统的前接触太阳能电池,而不影响效率。
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