{"title":"The effect of strain on carrier mobility","authors":"S. Prussin, A. Joshi","doi":"10.1109/IIT.2014.6940012","DOIUrl":null,"url":null,"abstract":"Advanced devices require knowledge of carrier concentration, mobility and resistivity profiles as well as the effects of strain. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) represents a technique to directly measure these parameters as well as the effects of strain from high dopant concentrations and group IV impurities.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Advanced devices require knowledge of carrier concentration, mobility and resistivity profiles as well as the effects of strain. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) represents a technique to directly measure these parameters as well as the effects of strain from high dopant concentrations and group IV impurities.
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