{"title":"Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates","authors":"S. Kanjanachuchai, T. Limwongse","doi":"10.1109/INEC.2010.5424719","DOIUrl":null,"url":null,"abstract":"The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation T-section, the dislocation intersection, the [1–10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"17 1","pages":"626-627"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5424719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation T-section, the dislocation intersection, the [1–10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
